C3089 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

C3089

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3089

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞

500

V

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

800

V

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

7

V

VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A

1.0

V

VBEsat Base-emitter saturation voltage

IC=3A ;IB=0.6A

1.5

V

ICBO

Collector cut-off current

VCB=500V; IE=0

10

μA

IEBO

Emitter cut-off current

VEB=5V; IC=0

10

μA

hFE-1

DC current gain

IC=0.6A ; VCE=5V

15

50

hFE -2

DC current gain

固IN电C半H导AN体GE SEMICONDUCTOR COB

Output capacitance

fT

Transition frequency

Switching times

ton

Turn-on time

ts

Storage time

IC=3A ; VCE=5V

IE=0 ; VCB=10V;f=1MHz

IC=0.6A ; VCE=10V

IC=4A ;IB1=-IB2=0.8A

RL=50Ω,VCC=200V

8

80

18

1.0

3.0

pF

MHz

μs

μs

tf

Fall time

1.0

μs

‹ hFE-1 classifications

L

M

N

15-30 20-40 30-50

2

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