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C3089 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza
componentes Descripción
Fabricante
C3089
Iscsemi
Inchange Semiconductor Iscsemi
C3089 Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3089
DESCRIPTION
·With TO-3PN package
·High breakdown voltage (VCBO800V)
·Fast switching speed
·Wide ASOSafe Operating Area
APPLICATIONS
·500V/7A Switching Regulator Applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
500
7
UNIT
V
V
V
IC
Collector current
7
A
ICM
Collector current-peak
14
A
IB
Base current
3
A
PC
Collector power dissipation
Ta=25
TC=25
2.5
W
80
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150

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