C3087 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
C3087 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=4mA ; RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat)
VBE(sat)
ICBO
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=3A; IB=0.6 A
IC=3A; IB=0.6 A
VCB=500V ;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.6A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT
Transition frequency
COB
Output capacitance
Switching times
IC=0.6A ; VCE=10V
f=10MHz ; VCB=10V
ton
Turn-on time
tstg
Storage time
tf
Fall time
VCC=200V; IC=4A
IB1=0.8A;IB2=-0.8A;
RL=50Ω
hFE-1 classifications
L
M
N
15-30
20-40
30-50
Product Specification
2SC3087
MIN TYP. MAX UNIT
500
V
800
V
7
V
1.0
V
1.5
V
10
μA
10
μA
15
50
8
18
MHz
80
pF
1.0 μs
3.0 μs
1.0 μs
2
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