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Número de pieza
componentes Descripción
C3087 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
C3087
Silicon NPN Power Transistors
Inchange Semiconductor
C3087 Datasheet PDF : 3 Pages
1
2
3
Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·
With TO-220C package
·
High breakdown voltage
: V
CBO
=800V(Min)
·
Fast switching speed.
·
Wide area of safe operation
APPLICATIONS
·
500V/5A switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Product Specification
2SC3087
·
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
PARAMETER
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
V
EBO
Emitter-base voltage
I
C
Collector current
I
CP
Collector current-peak
I
B
Base current
P
C
Collector dissipation
CONDITIONS
Open emitter
Open base
Open collector
PW
≤
300
μ
s, Duty Cycle
≤
10%
T
C
=25
℃
T
j
Junction temperature
T
stg
Storage temperature
VALUE
800
500
7
5
10
2
50
1.75
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
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