C2981 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

C2981

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞

V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCE(sat) Collector-emitter saturation voltage IC=2.5A; IB=0.5A

VBE(sat) Base-emitter saturation voltage

IC=2.5A; IB=0.5A

ICBO

Collector cut-off current

VCB=750V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.8A ; VCE=5V

hFE-2

DC current gain

IC=4A ; VCE=5V

Product Specification

2SC2981

MIN TYP. MAX UNIT

800

V

900

V

7

V

1.0

V

1.5

V

0.1 mA

0.1 mA

15

10

2

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