2SC3156 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2SC3156

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=∞

V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ; IC=0

VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A

VBE(sat) Base-emitter saturation voltage

IC=3A; IB=0.6A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=0.4A ; VCE=5V

hFE-2

DC current gain

IC=2A ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=10V, f=1MHz

fT

Transition frequency

IC=0.4A ; VCE=10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=4A; IB1=0.8A;IB2=-1.6A

VCC=400V ,RL=100Ω

Product Specification

2SC3156

MIN TYP. MAX UNIT

800

V

900

V

7

V

2.0

V

1.5

V

10

μA

10

μA

10

8

120

pF

15

MHz

1.0

μs

2.5

μs

0.7

μs

2

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