C2715 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

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componentes Descripción

Fabricante

C2715

Silicon NPN Epitaxial Planar Transistor

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SC2715

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0

35

V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=B 0

30

V

Emitter-base breakdown voltage

V(BR)EBO IE=10μA,IC=0

4

V

Collector cut-off current

ICBO

VCB=35V,IE=0

0.1 μA

Emitter cut-off current

IEBO

VEB=4V,IC=0

DC current gain

hFE

VCE=12V,IC=2mA

40

Collector-emitter saturation voltage VCE(sat)

IC=10mA, IB=B 1mA

0.1 μA

240

0.4 V

Base-emitter saturation voltage

VBE(sat)

IC=10mA, IB=B 1mA

1

V

Transition frequency

fT

VCE=10V, IC= 1mA

100

CLASSIFICATION OF hFE(1)

400 MHz

Rank

Range

Marking

R

40-80

RR1

O

70-140

RO1

Y

120-240

RY1

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC099

Rev.A

www.galaxycn.com

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