2SC2712(2005) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

2SC2712
(Rev.:2005)

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SC2712

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

150

mA

Base Current

IB

30

mA

Collector Power Dissipation

Junction Temperature

Storage Temperature

PC

150

mW

TJ

+125

℃

TSTG

-55 ~ +125

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Transistor Frequency

Collector Output Capacitance

Noise Figure

SYMBOL

ICBO

IEBO

hFE

VCE(SAT)

fT

Cob

NF

TEST CONDITIONS

VCB=60V, IE=0

VEB=5V, IC=0

VCE=6V, IC=2mA

IC=100mA, IB=10mA

VCE=10V, IC=1mA

VCB=10V, IE=0, f=1MHz

VCE=6V, IC=0.1mA

f=1kHz, Rg=10KΩ

MIN TYP MAX UNIT

0.1

µA

0.1

µA

70

700

0.1 0.25

V

80

MHz

2.0

3.5

pF

1.0

10

dB

CLASSIFICATION OF hFE

RANK

RANGE

O

70~140

Y

120~240

G

200~400

L

350~700

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-029.B

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