2SC1880 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC1880 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=30mA, IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA, IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50mA, IC=0
VCEsat Collector-emitter saturation voltage IC=2A ,IB=8mA
ICBO
Collector cut-off current
VCB=100V, IE=0
ICEO
Collector cut-off current
VCE=100V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=2A ; VCE=2V
Product Specification
2SC1880
MIN TYP. MAX UNIT
120
V
120
V
5
V
1.2
V
0.1 mA
0.1 mA
50
mA
1000
2
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