UTC2SC2235(Old_V) Ver la hoja de datos (PDF) - Unisonic Technologies
Número de pieza
componentes Descripción
Fabricante
UTC2SC2235 Datasheet PDF : 4 Pages
| |||
UTC2SC2235 NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTIC
1000
800
Ic-VCE
Common Emitter
15
10
Ta =25° C
7
600
5
4
400
3
2
200
IB=1mA
0
0
0 2 4 6 8 10 12 14
Collector Emitter Voltage VCE (V)
VCE(sat) -Ic
0.5
0.3 Common Emitter
Ic/IB =10
0.1
0.05
0.03
Ta=100° C
Ta=25° C Ta=-25° C
0.01
3
10 30 100 300
Collector Current Ic (mA)
1000
3000
1000
500
300
Safe Operating Area
Ic Max.(Pulse) *
Ic Max.
(Continous)
1ms *
10ms *
100 DC Operation
50
30
100ms *
10
*Single Nonrepetitive Pulse
5
Ta=25° C
3 Curve must be derated linearly
1 with increase in temperature
0.5 1 3 5 10 30 50 100 3005001000
Collector Emitter Voltage VcE (V)
1000
500
300
hFE -Ic
Ta=100° C
Common Emitter
VCE=5V
Ta=25° C
100
50
30
10
3
800
600
Ta=-25° C
10 30 100 300
Collector Current Ic (mA)
Ic-VBE
1000
Ta=100° C
400
Ta=25° C
200 Common Emitter
VCE=5V
0
0 0.2 0.4 0.6
Ta= -25° C
0.8 1.0 1.2
Base Emitter Voltage VBE (V)
1000
Pc -Ta
800
600
400
200
0
0 20 40 60 80 100 120 140 160
Ambient Temperature Ta(° C)
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R211-012,A
Share Link: 