MSK5030 Ver la hoja de datos (PDF) - M.S. Kennedy
Número de pieza
componentes Descripción
Fabricante
MSK5030 Datasheet PDF : 6 Pages
| |||
ABSOLUTE MAXIMUM RATINGS
Input Voltage ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -0.3V, +36V
Enable Voltage ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ -0.3V, +36V
Output Current ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 4.0 Amps
Sense Pin Voltage ○ ○ ○ ○ ○ ○ ○ ○ ○-0.3V, +7V
Thermal Resistance
(Each MOSFET) 15°C/W ○
○
○
○
○
○
○
○
○
○
○
○
○
TST Storage Temperature Range ○ ○-65°C to +150°C
TLD Lead Temperature Range○ ○ ○ ○ ○ ○ ○ ○ ○ ○ 300°C
(10 Seconds)
TC Case Operating Temperature
MSK5030 Series ○ ○ ○ ○ ○ ○ ○ -40°C to +85°C
MSK5030B/E Series ○ ○ ○ ○ ○ -55°C to +125°C
TJ Junction Temperature ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ +150°C
ELECTRICAL SPECIFICATIONS
Parameter
Input Supply Range 2
Output Voltage 5030-2.5 8
Output Voltage 5030-3.3 8
Output Voltage 5030-5.0 8
Output Current 2
Load Regulation 2
Line Regulation
Quiescent Power Consumption 2
Oscillator Frequency 2 7
Enable Input Voltage 2
Enable Input Current 2
Disabled Quiescent Current 2
Current Limit Threshold 2
Cton Current 2
Efficiency 2
5030-2.5
5030-3.3
5030-5.0
Test Conditions 1
IOUT=1A VIN=4.5V
IOUT=1A VIN=4.5V
IOUT=1A VIN=6V
Within SOA
Output not current limited
IOUT=1A 6V≤VIN≤30V
IOUT=0mA
Internal IOUT≥1.5A
High
Low
VEN=VIN
VEN=0V
VEN=0V VIN=30V
Positive
Negative
Source
Fault Sink
VIN=4.5V IOUT=1A
VIN=4.5V IOUT=1A
VIN=6V IOUT=1A
Group A MSK 5030B/E SERIES MSK 5030 SERIES
Units
Subgroup Min. Typ. Max. Min. Typ. Max.
1,2,3
1
1
1
1
-
1,2,3
-
-
1,2,3
1,2,3
1
1
1
1
1
1
1
1
1
1
4.5
2.40
3.19
4.85
4.0
-
-
-
270
2.0
-
-
-
-
80
-50
2.5
2.0
-
-
-
-
2.51
3.35
5.1
4.5
2.5
0.04
5.0
300
-
-
0.5
0.2
1.0
100
-100
4.0
-
80
90
95
30
2.63
3.47
5.25
-
-
0.07
-
330
-
0.5
2.0
2.0
5.0
120
-160
6.5
-
-
-
-
5.0
2.26
3.05
4.75
4.0
-
-
-
270
2.0
-
-
-
-
75
-45
2.5
2.0
-
-
-
-
2.51
3.35
5.1
4.5
2.5
0.04
5.0
300
-
-
0.5
0.2
1.0
100
-100
4.0
-
80
90
95
30 V
2.76 V
3.55 V
5.35 V
-
A
-
%
0.08 %/V
- mW
330 KHz
-
V
0.5 V
2.0 µA
2.0 µA
5.0 µA
125 mV
-165 mV
6.5 µA
- mA
-
%
-
%
-
%
NOTES:
1 VIN=Enable, 5mV≤(sense high-sense low)≤75mV, IL=0A, COUT=5x220µF, CIN=2x22µF, CTON=0.01µF unless otherwise specified.
2 Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
3 All output parameters are tested using a low duty cycle pulse to maintain TJ = TC.
4 Industrial grade and "E" suffix devices shall be tested to subgroup 1 unless otherwise specified.
5 Military grade devices ('B' suffix) shall be 100% tested to subgroups 1,2 and 3.
6 Subgroup 1
TA=TC=+25°C
Subgroup 2
TA=TC=+125°C
Subgroup 3
TA=TC=-55°C
7 Actual switching frequency is load dependent. Refer to typical performance curves.
8 Alternate output voltages are available. Please contact the factory.
2
Rev. E 6/02
Share Link: 