Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50m A
ICBO
Collector cut-off current
VCB=150V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=10V
fT
Transition frequency
IC=0.5A ; VCE=10V
Product Specification
2SC1448
MIN TYP. MAX UNIT
150
V
5
V
1.5
V
20
μA
20
μA
40
140
5
MHz
2