2SC1515K Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

2SC1515K

Silicon NPN Triple Diffused

Renesas Electronics 

2SC1515(K)

Electrical Characteristics

Item

Symbol Min

Collector to emitter breakdown voltage V(BR)CES 200

V(BR)CEO

150

Emitter to base breakdown voltage

V(BR)EBO

5

Collector cutoff current

ICBO

—

DC current transfer ratio

hFE

30

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter saturation voltage

VBE(sat)

—

Gain bandwidth product

fT

60

Collector output capacitance

Cob

—

(Ta = 25°C)

Typ Max Unit

Test conditions

—

—

V IC = 10 µA, RBE = 0

—

—

V IC = 1 mA, RBE = ∞

—

—

V IE = 10 µA, IC = 0

—

0.1

µA VCB = 20 V, IE = 0

—

300

VCE = 6 V, IC = 10 mA

—

1.0

V IC = 10 mA, IB = 1 mA

—

1.5

V IC = 10 mA, IB = 1 mA

—

—

MHz VCE = 6 V, IC = 10 mA

—

10

pF VCB = 6 V, IE = 0, f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 4

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