A821S Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
A821S Datasheet PDF : 3 Pages
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Transistors
2SD1834
zElectrical characteristics curves
−20
Ta=25°C
VCE=−5V
−10
−5
−2
−1
−0.5
−0.2
−0.1
−0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Ground emitter propagation characteristics
Ta=25°C
−20
−10
−120µA
−100µA
−80µA
−60µA
−40µA
−20µA
Ta=25°C
−20
−16
−2−0108µ0−Aµ1A60µA
−12
−8
−4
−140µA
−120µA
−100µA
−80µA
−60µA
−40µA
−20µA
0
0
−4
−8
−12
−16 −20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
0
0
−0.4
−0.8 −1.2 −1.6 −2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Ground emitter output characteristics ( Ι ) Fig.3 Ground emitter output characteristics ( ΙΙ )
1000
Ta=25°C
500
VCE= −3V
200
100
50
20
10
5
2
1
−0.1 −0.2
−0.5 −1 −2
−5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current
−1000
Ta=25°C
IC/IB=10
−500
−200
−100
−50
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation voltage
vs. collector current
1000
Ta=25°C
500
VCE= −5V
200
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
EMITTER CURRENT : IE (mA)
Fig.6 Gain bandwidth product
vs. emitter current
100
Ta=25°C
f=1MHz
50
IE=0A
IC=0A
20
Cib
10
5
Cob
2
1
−0.2 −0.5 −1 −2
−5 −10 −20 −50
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Emitter input capacitance
vs. emitter-base voltage
Collector output capacitance
vs. collector-base voltage
Rev.A
2/2
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