A821S Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
A821S Datasheet PDF : 3 Pages
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Transistors
2SA821S
High-voltage Amplifier Transistor (−210V, −30mA)
2SA821S
zFeatures
1) High breakdown voltage, (VCER = −210V )
2) Complements the 2SC1651S.
zExternal dimensions (Unit : mm)
SPT
4.0
2.0
(1)Emitter
(2)Collector
(3)Base
0.45
2.5
5.0
(1) (2) (3)
0.5 0.45
Taping specifications
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCES
VEBO
IC
−210
−210
−5
−30
Collector power dissipation
Junction temperature
Storage temperature
PC
250
Tj
150
Tstg −55 to +150
∗ RBE=10kΩ
Unit
V
V
∗
V
A
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−210
−210
−5
−
−
−
82
−
−
Typ.
−
−
−
−
−
−
−
50
8
Max.
−
−
−
−
−1
−1
−1
270
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC= −50µA
IC= −100µA, RBE=10kΩ
IE= −50µA
VCB= −150V
VEB= −4.5V
IC/IB= −2mA/−0.2mA
VCE= −3V, IC= −5A
VCE= −5V , IE=2mA , f=30MHz
VCE= −10V , IE=0A , f=1MHz
zPackaging specifications and hFE
Type
2SA821S
Package
SPT
hFE
PQ
Code
TP
Basic ordering unit (pieces)
5000
Rev.A
1/2
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