2SB755 Ver la hoja de datos (PDF) - SavantIC Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB755

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB755

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-0.1A; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-10mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A

VBE

Base-emitter on voltage

IC=-5A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-5V

fT

Transition frequency

COB

Output capacitance

IC=-1A ; VCE=-10V

IE=0; VCB=-10V;f=1MHz

MIN TYP. MAX UNIT

-150

V

-5

V

-2.0

V

-1.5

V

-50

µA

-50

µA

55

160

20

MHz

450

pF

hFE classifications

R

O

55-110

80-160

2

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