2SB710 Ver la hoja de datos (PDF) - TY Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB710 Datasheet PDF : 1 Pages
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Product specification
2SB710
Features
Large collector current IC.
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-25
V
VEBO
-5
V
IC
-0.5
A
ICP
-1
A
PC
200
mW
Tj
150
Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
VCBO IC = -10 ìA, IE = 0
VCEO IC = -10 mA, IB = 0
VEBO IE = -10 ìA, IC = 0
ICBO VCB = -20 V, IE = 0
hFE VCE = -10 V, IC = -150 mA
VCE(sat) IC = -300 mA, IB = -30 mA
VBE(sat) IC = -300 mA, IB = -30 mA
fT VCB = -10 V, IE = 50 mA , f = 200 MHz
Cob VCB = -10V , IE = 0 , f = 1.0MHz
Min Typ Max Unit
-30
V
-25
V
-5
V
-0.1 ìA
85
340
-0.35 -0.6 V
-1.1 -1.5 V
200
MHz
6 15 pF
hFE Classification
Marking
hFE
CQ
85 170
CR
120 240
CS
170 340
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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