2SB697K Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

Número de pieza

componentes Descripción

Fabricante

2SB697K

HIGH POWER AMPLIFIER APPLICATION

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB697 2SB697K

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2SB697

-140

V(BR)CEO

Collector-emitter

breakdown voltage

IC=-50mA ;IB=0

V

2SB697K

-160

2SB697

-160

V(BR)CBO

Collector-emitter

breakdown voltage

IC=-5mA ;IE=0

V

2SB697K

-180

V(BR)EBO Emitter-base breakdown voltage

IE=-5mA ;IC=0

-6

V

VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A

-1.0 -2.5

V

VBE

Base-emitter on voltage

导体 ICBO

Collector cut-off current

固I电NC半HANGE SEMICONDUCTOR IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

IC=-1A ; VCE=-5V

VCB=-80V; IE=0

VEB=-4V; IC=0

IC=-1A ; VCE=-5V

IC=-5A ; VCE=-5V

-1.5

V

-0.1 mA

-0.1 mA

40

320

20

fT

Transition frequency

IC=-1A ; VCE=-5V

15

MHz

‹ hFE-1 Classifications

C

D

E

40-80

60-120

100-200

F

160-320

2

Share Link: