2SB697K Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB697K

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

2SB697

2SB697K

IC=-50mA ;IB=0

V(BR)CBO

Collector-emitter

breakdown voltage

2SB697

2SB697K

IC=-5mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-5mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A

VBE

Base-emitter on voltage

IC=-1A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-5A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

‹ hFE-1 Classifications

C

D

E

40-80

60-120

100-200

F

160-320

Product Specification

2SB697 2SB697K

MIN TYP. MAX UNIT

-140

V

-160

-160

V

-180

-6

V

-1.0 -2.5

V

-1.5

V

-0.1 mA

-0.1 mA

40

320

20

15

MHz

2

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