2SB1647 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2SB1647

Silicon PNP Darlington Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Darlington Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-10mA

VBEsat Base-emitter saturation voltage

IC=-10A ;IB=-10mA

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-10A ; VCE=-4V

Cob

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-2A ; VCE=-12V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-10A;RL=4Ω

IB1=- IB2=-10mA

VCC=-40V

‹ hFE Classifications

O

P

Y

5000-12000 6500-20000 15000-30000

Product Specification

2SB1647

MIN TYP. MAX UNIT

-150

V

-2.5

V

-3.0

V

-100 μA

-100 μA

5000

320

pF

45

MHz

0.7

μs

1.6

μs

1.1

μs

2

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