2SB1607 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB1607 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1607
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=-5A ; IB=-0.25A
VBEsat Base-emitter saturation voltage
IC=-5A ; IB=-0.25A
ICBO
Collector cut-off current
VCB=-100V;IE=0
IEBO
Emitter cut-off current
VEB=-5V;IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
hFE-2
DC current gain
IC=-3A ; VCE=-2V
fT
Transition frequency
IC=-0.5A ; VCE=-10V;f=10MHz
Switching times
ton
Turn-on time
tstg
Storage time
IC=-3A; IB1=-IB2=-0.3A
tf
Fall time
hFE-2 classifications
Q
P
90-180
130-260
MIN TYP. MAX UNIT
-80
V
-0.5
V
-1.5
V
-10 μA
-50 μA
45
90
260
30
MHz
0.5
μs
1.5
μs
0.1
μs
2
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