2SB563 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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Fabricante

2SB563

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB563

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A

VBEsat

Base-emitter saturation voltage

IC=-3A; IB=-0.3A

ICBO

Collector cut-off current

VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-2V

MIN TYP. MAX UNIT

-80

V

-80

V

-5

V

-1.0 V

-1.5 V

-0.1 mA

-0.1 mA

30

200

2

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