2SB546 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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Fabricante

2SB546

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB546

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-0.5mA; IE=0

V(BR)EBO Emitter-base breakdown votage

IE=-0.5mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-500m A;IB=-50m A

ICBO

Collector cut-off current

VCB=-150V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-0.4A ; VCE=-10V

fT

Transition frequency

IC=-0.4A ; VCE=-10V

MIN TYP. MAX UNIT

-150

V

-200

V

-5

V

-1.0

V

-50

µA

-50

µA

40

240

5

MHz

hFE classifications

R

O

Y

40-80 70-140 120-240

2

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