2SB556 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB556

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB555 2SB556

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

2SB555

-140

V(BR)CEO

Collector-emitter

breakdown voltage

IC=-0.1A ;IB=0

V

2SB556

-120

V(BR)EBO Emitter-base breakdown voltage

IE=-10mA ;IC=0

-5

V

VCEsat

Collector-emitter

saturation voltage

2SB555 IC=-7A; IB=-0.7A

2SB556 IC=-6A; IB=-0.6A

-3.0

V

VBE

Base-emitter on voltage

IC=-7A ; VCE=-5V

-2.5

V

ICBO

Collector cut-off current

导体 IEBO

Emitter cut-off current

固I电NC半HANGE SEMICONDUCTOR hFE

DC current gain

COB

Output capacitance

fT

Transition frequency

VCB=-50V; IE=0

VEB=-5V; IC=0

IC=-2A ; VCE=-5V

IE=0 ; VCB=-10V; f=1.0MHz

IC=-2A ; VCE=-5V

-0.1 mA

-0.1 mA

40

140

330

pF

6

MHz

2

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