2SB1695 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB1695 Datasheet PDF : 3 Pages
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Transistors
zElectrical characteristic curves
1000
Ta=100°C
VCE=−2V
Pulsed
Ta=25°C
Ta=−40°C
100
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
2SB1695
1
VBE(sat)
Ta=−40°C
Ta=25°C
Ta=100°C
10
Ta=25°C
Pulsed
1
0.1
VCE(sat)
Ta=100°C
Ta=25°C
Ta=−40°C
0.01
0.001
0.01
0.1
IC/IB=20/1
Pulsed
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.1
IC/IB=50/1
IC/IB=20/1
0.01
IC/IB=10/1
0.001
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
1
VCE=−2V
Pulsed
0.1
Ta=100°C
Ta=25°C
Ta=−40°C
0.01
0.001
0
0.5
1
1.5
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
1000
100
Ta=25°C
VCE=−2V
f=100MHz
10
0.01
0.1
1
10
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter current
1000
100
Ta=25°C
VCE=−5V
tstg
IC/IB=20/1
tf
tdon
10
tr
1
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Switching time
1000
Ta=25°C
IC=0A
f=1MHz
100
Cib
Cob
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2
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