2SB1695 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB1695 Datasheet PDF : 3 Pages
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Transistors
Low frequency amplifier
2SB1695
2SB1695
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) ≤−370mV
at IC =−1A / IB =−50mA
zExternal dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
2.9
0.4
(3)
(1) (2)
0.95 0.95
1.9
1.0MAX
0.85
0.7
0~0.1
0.16
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
−30
V
Collector-emitter voltage
VCEO
−30
V
Emitter-base voltage
VEBO
−6
V
Collector current
IC
−1.5
A
ICP
−3
A∗
Power dissipation
Junction temperature
PC
500
mW
Tj
150
°C
Range of storage temperature Tstg −55~+150
°C
∗Single pulse, PW=1ms
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SB1695
Taping
TL
3000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−30
−
−
V IC=−10µA
−30
−
−
V IC=−1mA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−30V
−
−
−100 nA VEB=−6V
−
−200 −370 mV IC=−1A, IB=−50mA
270
−
680
− VCE=−2V, IC=−100mA ∗
−
280
−
MHz VCE=−2V, IE=100mA, f=100MHz ∗
−
13
−
pF VCB=−10V, IE=0A, f=1MHz
Rev.A
1/2
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