2SB1623P Ver la hoja de datos (PDF) - Panasonic Corporation
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2SB1623P Datasheet PDF : 1 Pages
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Power Transistors
2SB1623
Silicon PNP epitaxial planer type
For power amplification
I Features
• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• Dielectric breakdown voltage of the package: > 5 kV
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
VCBO
−60
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−5
V
Peak collector current
ICP
−8
A
Collector current
IC
−4
A
Collector power TC = 25°C
PC
40
W
dissipation
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D Package
I Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage (DC value)
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2 *
VBE
VCE(sat)1
VCE(sat)2
fT
ton
tstg
tf
VCB = −60 V, VBE = 0
VCB = −30 V, IB = 0
VEB = −5 V, IC = 0
IC = −30 mA, IB = 0
VCE = −3 V, IC = − 0.5 A
VCE = −3 V, IC = −3 A
VCE = −3 V, IC = −3 A
IC = −3 A, IB = −12 mA
IC = −5 A, IB = −20 mA
VCB = −10 V, IC = − 0.5 A, f = 1 MHz
IC = −3 A, IB1 = −12 mA, IB2 = 12 mA
VCC = −50 V
Note) *: Rank classification
Rank
P
Q
R
hFE2
4 000 to 10 000 2 000 to 5 000 1 000 to 2 500
Min
−60
1 000
1 000
Typ Max
−200
−500
−2
10 000
−2.5
−2
−4
20
0.3
2
0.5
Unit
µA
µA
mA
V
V
V
V
MHz
µs
µs
µs
1
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