2SB1612 Ver la hoja de datos (PDF) - Panasonic Corporation

Número de pieza

componentes Descripción

Fabricante

2SB1612

Silicon PNP epitaxial planer type

Panasonic Corporation 

Transistor

2SB1612

Silicon PNP epitaxial planer type

For low-frequency amplification

Complementary to 2SD2474

s Features

q Low collector to emitter saturation voltage VCE(sat).

q Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

s Absolute Maximum Ratings (Ta=25˚C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–10

V

Collector to emitter voltage VCEO

–10

V

Emitter to base voltage

VEBO

–7

V

Peak collector current

ICP

–2.4

A

Collector current

IC

–2

A

Collector power dissipation PC*

1

W

Junction temperature

Tj

150

˚C

Storage temperature

Tstg

–55 ~ +150

˚C

* Printed circuit board: Copper foil area of 1cm2 or more, and the board

thickness of 1.7mm for the collector portion

Unit: mm

4.5±0.1

1.6±0.2

1.5±0.1

45°

0.4±0.08

0.5±0.08

1.5±0.1

3.0±0.15

321

marking

0.4±0.04

1:Base

2:Collector

3:Emitter

EIAJ SC–62

Mini Power Type Package

Marking symbol : 2F

s Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

Conditions

min

typ

max Unit

Collector cutoff current

Collector to base voltage

ICBO

VCBO

VCB = –7V, IE = 0

IC = –10µA, IE = 0

–1

µA

–10

V

Collector to emitter voltage

VCEO

IC = –1mA, IB = 0

–10

V

Emitter to base voltage

VEBO

IE = –10µA, IC = 0

–7

V

Forward current transfer ratio

hFE

VCE = –2V, IC = 200mA

200

800

Collector to emitter saturation voltage VCE(sat)

IC = –1A, IB = –10mA

– 0.19 – 0.25 V

Transition frequency

fT

VCB = –6V, IE = 50mA, f = 200MHz

60

MHz

Collector output capacitance

Cob

VCB = –6V, IE = 0, f = 1MHz

100

pF

1

Share Link: