SA8026DH Ver la hoja de datos (PDF) - Philips Electronics

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SA8026DH

2.5GHz low voltage fractional-N dual frequency synthesizer

Philips Electronics 

Philips Semiconductors

2.5GHz low voltage fractional-N dual frequency

synthesizer

Product specification

SA8026

CHARACTERISTICS (continued)

SYMBOL

PARAMETER

CONDITIONS

Phase noise (condition RSET = 7.5 kΩ, CP = 00)

Synthesizer’s contribution to close-in phase noise

of 900 MHz RF signal at 1 kHz offset.

Synthesizer’s contribution to close-in phase noise

of 1800 MHz RF signal at 1 kHz offset.

L(f)

Synthesizer’s contribution to close-in phase noise

of 800 MHz RF signal at 1 kHz offset.

Synthesizer’s contribution to close-in phase noise

of 2100 MHz RF signal at 1 kHz offset.

GSM

fREF = 13MHz, TCXO,

fCOMP = 1MHz

indicative, not tested

TDMA

fREF = 19.44MHz, TCXO,

fCOMP = 240kHz

indicative, not tested

Interface logic input signal levels; pins 2, 17, 18, 19, 20

VIH

VIL

ILEAK

HIGH level input voltage

LOW level input voltage

Input leakage current

Lock detect output signal (in push/pull mode); pin 1

VOL

LOW level output voltage

VOH

HIGH level output voltage

NOTES:

1.

ISET

=

VSET

RSET

bias

current

for

charge

pumps.

logic 1 or logic 0

Isink = 2mA

Isource = –2mA

2. The relative output current variation is defined as:

DIOUT

IOUT

+

2.

(I2–I1)

I(I2 ) I1)I

;

with V1 + 0.7V,

V2 + VDDCP –0.8V (See Figure 3.)

MIN.

TYP.

–

–90

–

–83

–

–85

–

–77

0.7*VDD

–

–0.3

–

–0.5

–

–

–

VDD–0.4

–

MAX.

UNIT

–

dBc/Hz

–

dBc/Hz

–

dBc/Hz

–

dBc/Hz

VDD+0.3

V

0.3*VDD

V

+0.5

µA

0.4

V

–

V

IZOUT

CURRENT

I2

I1

1999 Nov 04

V1

V2

VPH

I2

I1

Figure 3. Relative Output Current Variation

6

SR00602

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