2SB1353 Ver la hoja de datos (PDF) - Inchange Semiconductor

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Fabricante

2SB1353

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB1353

DESCRIPTION

·Good Linearity of hFE

· Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -120V(Min)

·Complement to Type 2SD2033

APPLICATIONS

·Designed for use in high voltage driver applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-120

V

VCEO Collector-Emitter Voltage

-120

V

VEBO Emitter-Base Voltage

-5.0

V

IC

Collector Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-1.5

A

1.8

W

20

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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