2SB1342 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

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Fabricante

2SB1342

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1342

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0

-80

V

V(BR)CBO Collector-base breakdown voltage

IC=-50μA; IE=0

-80

V

VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-4mA

ICBO

Collector cut-off current

VCB=-80V; IE=0

-1.0 -1.5

V

-100 μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-3.0

mA

hFE

DC current gain

IC=-2A ; VCE=-3V

1000

10000

fT

Transition frequency

固I电NC半H导A体NGE SEMICONDUCTOR COB

Output capacitance

IC=-0.5A ; VCE=-5V

IE=0 ; VCB=-10V;f=1MHz

12

MHz

45

pF

2

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