2SB1316 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB1316 Datasheet PDF : 3 Pages
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Transistors
zElectrical characteristics curve
−2.0
−1mA
−0.9mA
−1.6 −0.8mA
−0.7mA
−1.2
−0.8
−0.6mA
−0.5mA
−0.4mA
Ta=25°C
IB= −0.3mA
−0.4
0
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output characteristics
−10
Ta=25°C
−5
VCE= −2V
−2
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter propagation
characteristics
2SB1580 / 2SB1316
10k
Ta=25°C
5k
VCE= −2V
2k
1k
500
200
100
50
20
10
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current
−50
Ta=25°C
IC / IB =1000
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
−0.05 −0.1 −0.2 −0.5 −1 −2
−5 −10
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation voltage
vs. collector current
1000
Ta=25°C
500
IE=0A
f=1MHz
200
100
50
20
10
5
2
1
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.5 Collector output capacitance
vs. collector-base voltage
50
20
10
5 Ic Max. (Pulse∗)
2
DC
1
500m
Ta=25°C
∗ Single
NONREPETITIVE
PULSE
Pw=10ms∗
Pw=100ms∗
200m
100m
50m
20m
10m
0.2 0.5 1 2 5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.6 Safe Operating area (2SB1580)
50
20
10
5 Ic Max. (Pulse∗)
2
DC
1
500m
Ta=25°C
∗ Single
NONREPETITIVE
PULSE
Pw=10ms∗
Pw=100ms∗
200m
100m
50m
20m
10m
0.2 0.5 1 2 5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Safe Operating area (2SB1316)
Rev.A
2/2
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