2SB1258 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SB1258

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-3A; IB=-6mA

VBEsat Base-emitter saturation voltage

IC=-3A; IB=-6mA

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE

DC current gain

VCB=-100V; IE=0

VEB=-6V; IC=0

IC=-3A ; VCE=-2V

fT

Transition frequency

IE=0.2A ; VCE=-12V

COB

Collector output capacitance

IE=0; f=1MHz;VCB=-10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-3A; IB1=-IB2=-6mA

VCC=-30V ,RL=10Ω

Product Specification

2SB1258

MIN TYP. MAX UNIT

-100

V

-1.5

V

-2.0

V

-10 μA

-10 μA

1000

100

MHz

100

pF

0.6

μs

1.6

μs

0.5

μs

2

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