2SB1257 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

Número de pieza

componentes Descripción

Fabricante

2SB1257

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB1257

DESCRIPTION

·With TO-220F package

·Complement to type 2SD2014

·High DC current gain

·DARLINGTON

APPLICATIONS

·Driver for solenoid ,relay and motor

and general purpose

PINNING

PIN

1

2

3

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VCBO

Collector-base voltage

Open emitter

VCEO

Collector-emitter voltage

Open base

VEBO

Emitter-base voltage

Open collector

IC

Collector current

ICM

Collector current-peak

IB

Base current

PC

Collector dissipation

TC=25℃

Tj

Junction temperature

Tstg

Storage temperature

VALUE

-60

-60

-6

-4

-6

-1

25

150

-55~150

UNIT

V

V

V

A

A

A

W

℃

℃

Share Link: