2SB1260L-Q-AA3-R(2017) Ver la hoja de datos (PDF) - Unisonic Technologies

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componentes Descripción

Fabricante

2SB1260L-Q-AA3-R
(Rev.:2017)

PNP SILICON TRANSISTOR

Unisonic Technologies 

2SB1260

PNP SILICON TRANSISTOR

 ABSOLUATE MAXIUM RATINGS ( TA=25°C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

VCBO

-80

V

VCEO

-80

V

Emitter -Base Voltage

VEBO

-5

V

Peak Collector Current (single pulse, Pw=100ms)

ICM

-2

A

DC Collector Current

IC

SOT-223

-1

A

1

W

Power Dissipation

SOT-89

PD

0.5

W

TO-252

1.9

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS ( TA=25°C, unless otherwise specified )

PARAMETER

SYMBOL

TEST CONDITIONS

Collector Base Breakdown Voltage

BVCBO

Collector Emitter Breakdown Voltage BVCEO

Emitter Base Breakdown Voltage

BVEBO

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

DC Current Gain(Note 1)

hFE

Collector-Emitter Saturation Voltage

VCE(SAT)

Transition Frequency

fT

Output Capacitance

Cob

Note 1: Pulse test: PW<300s, Duty Cycle<2%

IC= -50μA

IC= -1mA

IE= -50μA

VCB=-60V

VEB=-4V

VCE=-3V, IOUT=-0.1A

IC=-500mA, IB=-50mA

VCE= -5V, IE=50mA, f=30MHz

VCB=-10V, IE=0, f=1MHz

 CLASSIFICATION OF hFE

MIN TYP MAX UNIT

-80

V

-80

V

-5

V

-1 μA

-1 μA

82

390

-0.4 V

100

MHz

25

pF

RANK

RANGE

P

82 ~ 180

Q

120 ~ 270

R

180 ~ 390

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R208-017.H

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