2SB1260G(2008) Ver la hoja de datos (PDF) - Unisonic Technologies

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Fabricante

2SB1260G
(Rev.:2008)

PNP SILICON TRANSISTOR

Unisonic Technologies 

2SB1260

PNP SILICON TRANSISTOR

„ ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

PARAMETER

Collector -Base Voltage

Collector -Emitter Voltage

Emitter -Base Voltage

Peak Collector Current (single pulse, Pw=100ms)

DC Collector Current

SYMBOL

VCBO

VCEO

VEBO

ICM

IC

RATINGS

-80

-80

-5

-2

-1

UNIT

V

V

V

A

A

Power Dissipation

SOT-89

TO-252

PD

0.5

W

1.9

W

Junction Temperature

TJ

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger.

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector Base Breakdown Voltage

BVCBO IC= -50μA

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

BVCEO IC= -1mA

BVEBO IE= -50μA

Collector Cut-Off Current

ICBO VCB=-60V

Emitter Cut-Off Current

IEBO VEB=-4V

DC Current Gain(Note 1)

hFE VCE=-3V, IOUT=-0.1A

Collector-Emitter Saturation Voltage VCE(SAT) IC=-500mA, IB=-50mA

Transition Frequency

fT VCE= -5V, IE=50mA, f=30MHz

Output Capacitance

Cob VCB=-10V, IE=0, f=1MHz

Note 1: Pulse test: PW<300μs, Duty Cycle<2%

„ CLASSIFICATION OF hFE

RANK

RANGE

P

82 ~ 180

Q

120 ~ 270

MIN TYP MAX UNIT

-80

V

-80

V

-5

V

-1 μA

-1 μA

82

390

-0.4 V

100

MHz

25

pF

R

180 ~ 390

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R208-017,E

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