2SB1057R Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SB1057R

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1057

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-0.7A

-2.0

V

VBE

Base-emitter on voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-7A ; VCE=-5V

VCB=-150V; IE=0

VEB=-3V; IC=0

-1.8

V

-50

μA

-50

μA

hFE-1

DC current gain

IC=-20mA ; VCE=-5V

20

hFE -2

DC current gain

IC=-1A ; VCE=-5V

40

200

hFE -3

DC current gain

IC=-7A ; VCE=-5V

20

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

450

pF

体 fT

Transition frequency

固I电NC半H导ANGE SEMICONDUCTOR ‹ hFE-2 classifications

R

Q

P

40-80 60-120 100-200

IC=-0.5A ; VCE=-10V

20

MHz

2

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