2SB1057 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB1057 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1057
DESCRIPTION
·
·With TO-3PFa package
·Complement to type 2SD1488
·High fT
·Satisfactory linearity of hFE
·Wide area of safe operation
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
导体 Absolute maximum ratings(Ta=25℃)
固I电NC半HANGE SEMICONDUCTOR SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-150
-5
UNIT
V
V
V
IC
Collector current
-9
A
ICP
Collector current-peak
-15
A
PC
Collector power dissipation
TC=25℃
100
W
3
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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