2SA812 Ver la hoja de datos (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2SA812

TRANSISTOR(PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

2SA8 1 2

TRANSISTOR(PNP)

FEATURES

z Complementary to 2SC1623

z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA)

z High Voltage: Vceo=-50V

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

Unit : mm

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-60

-50

-5

-100

200

150

-55-150

Units

V

V

V

mA

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

VBE

fT

Cob

Test conditions

IC=-100μA, IE=0

IC= -1mA, IB=0

IE= -100μA, IC=0

VCB=- 60 V, IE=0

VEB= -5V, IC=0

VCE=- 6V, IC= -1mA

IC=-100mA, IB= -10mA

IC=-1mA, VCE=-6V

VCE=-6V, IC= -10mA

VCB=-10V,IE=0,f=1MHz

MIN

-60

-50

-5

90

-0.58

TYP

180

4.5

MAX

-0.1

-0.1

600

-0.3

-0.68

UNIT

V

V

V

μA

μA

V

V

MHz

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

M4

90-180

M4

M5

135-270

M5

１　

JinYu

semiconductor

www.htsemi.com

M6

200-400

M6

M7

300-600

M7

Ｄａｔｅ：２０１１／０５

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