2SA812 Ver la hoja de datos (PDF) - DC COMPONENTS
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2SA812 Datasheet PDF : 1 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SA812
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency amplifier applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
1
2
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
-60
V
-50
V
-5
V
-100
mA
150
mW
+150
oC
-55 to +150 oC
.091(2.30)
.067(1.70)
.045(1.15)
.034(0.85)
.118(3.00)
.110(2.80)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -60
Collector-Emitter Breakdown Voltage BVCEO -50
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
DC Current Gain(1)
IEBO
VCE(sat)
VBE(on)
hFE
-
-
-0.55
90
Transition Frequency
fT
-
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-0.18
-0.62
200
180
4.5
Max
-
-
-
-0.1
-0.1
-0.3
-0.65
600
-
-
Unit
V
V
V
µA
µA
V
V
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-60V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-1mA, VCE=-6V
IC=-1mA, VCE=-6V
IC=-10mA, VCE=-6V
VCB=-10V, f=1MHz, IE=0
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