2SA886 Ver la hoja de datos (PDF) - SavantIC Semiconductor

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componentes Descripción

Fabricante

2SA886

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA886

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-2mA;IB=0

V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0

VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A

VBEsat

Base-emitter saturation voltage

IC=-2A ;IB=-0.2A

ICBO

Collector cut-off current

VCB=-20V; IE=0

ICEO

Collector cut-off current

VCE=-10V; IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-20V;f=1MHz

fT

Transition frequency

IC=0.5A ; VCB=-5V,f=200MHz

MIN TYP. MAX UNIT

-40

V

-50

V

-1.0

V

-1.5

V

-1

µA

-100 µA

-10 µA

80

220

45

pF

150

MHz

hFE Classifications

Q

R

80-160

120-220

2

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