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2SA886 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza
componentes Descripción
Fabricante
2SA886
Iscsemi
Inchange Semiconductor Iscsemi
2SA886 Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA886
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SC1847
·Low collector-emitter saturation voltage
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute Maximun Ratings (Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
TC=25
Tj
Junction temperature
Tstg
Storage temperature
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
VALUE
-50
-40
-5
-1.5
-3.0
1.2*1
5*2
150
-55~150
UNIT
V
V
V
A
A
W

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