2SA882 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

2SA882

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.3A

VCEsat-2 Collector-emitter saturation voltage IC=-7A ;IB=B -1.5A

VBE

Base-emitter on voltage

IC=-3A ; VCE=-4V

ICBO

Collector cut-off current

VCE=-130V; IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-4V

hFE-2

DC current gain

IC=-3A ; VCE=-4V

Product Specification

2SA882

MIN TYP. MAX UNIT

-130

V

-1.0

V

-3.0

V

-1.6

V

-0.1 mA

-0.1 mA

40

20

2

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