2SA812 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

2SA812

Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SA812

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0

-60

V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=B 0

-50

V

Emitter-base breakdown voltage

V(BR)EBO IE=-100μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-60V,IE=0

-0.1 μA

Emitter cut-off current

IEBO

DC current gain

hFE

Collector-emitter saturation voltage VCE(sat)

Base-emitter voltage

VBE

Transition frequency

fT

Collector output capacitance

Cob

VEB=-5V,IC=0

-0.1 μA

VCE=-6V,IC=-1mA

90 200 600

IC=-100mA, IB=B -10mA

-0.3 V

IC=-1mA, VCE=-6V

VCE=-6V, IC=-10mA

-0.58

-0.68 V

180

MHz

VCB=-10V,IE=0,f=1MHz

4.5

pF

CLASSIFICATION OF hFE(1)

Range

M4

Marking

90-180

M5

135-270

M6

200-400

M7

300-600

Document number: BL/SSSTC010

Rev.A

www.galaxycn.com

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