2SA965-Y Ver la hoja de datos (PDF) - Toshiba
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2SA965-Y Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA965
Power Amplifier Applications
Driver-Stage Amplifier Applications
2SA965
Unit: mm
• Complementary to 2SC2235.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−120
V
Collector-emitter voltage
VCEO
−120
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−800
mA
Emitter current
IE
800
mA
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
TO-92MOD
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5J1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.36 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
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