2SA817AO Ver la hoja de datos (PDF) - Toshiba

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componentes Descripción

Fabricante

2SA817AO

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

ICBO

VCB = −50 V, IE = 0

IEBO

VEB = −5 V, IC = 0

V (BR) CEO IC = −5 mA, IB = 0

hFE (1)

VCE = −2 V, IC = −50 mA

(Note)

hFE (2)

VCE (sat)

VBE

fT

Cob

VCE = −2 V, IC = −200 mA

IC = −200 mA, IB = −20 mA

VCE = −2 V, IC = −5 mA

VCE = −10 V, IC = −10 mA

VCB = −10 V, IE = 0, f = 1 MHz

Note: hFE (1) classification O: 70 to 140, Y: 120 to 240

Marking

A817A

Characteristics

indicator

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2SA817A

Min Typ. Max Unit

―

― −100 nA

―

― −100 nA

−80 ―

―

V

70

―

240

40

―

―

―

−0.55 ―

― 100

―

14

―

−0.4

V

−0.8

V

― MHz

―

pF

2

2006-11-09

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