A748 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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A748

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Base-emitter breakdown voltage

IC=-10mA ,IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ,IE=0

VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A

VBEsat Base-emitter saturation voltage

IC=-2A; IB=-0.2A

ICBO

Collector cut-off current

VCB=-40V; IE=0

ICEO

Collector cut-off current

VCE=-20V; IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-0.1A ; VCE=-5V

hFE-2

DC current gain

IC=-1A ; VCE=-5V

fT

Transition frequency

IC=0.5A ; VCE=-5V

hFE-2 Classifications

P

Q

50-100

80-160

R

120-220

www.jmnic.com

2SA748

MIN TYP. MAX UNIT

-50

V

-70

V

-0.6 -1.0

V

-1.0 -1.5

V

-1

μA

-100 μA

-100 μA

30

50

220

120

MHz

JMnic

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