2SA738 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

2SA738

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA

VBE

Base-emitter voltage

IC=-500mA ; VCE=-2V

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

VCB=-25V; IE=0

VEB=-5V; IC=0

IC=-150mA ; VCE=-2V

hFE-2

DC current gain

IC=-500mA ; VCE=-2V

fT

Transition frequency

IC=-50mA; VCE=-5V

Product Specification

2SA738

MIN TYP. MAX UNIT

-25

V

-0.5

V

-1.0

V

-1.0 μA

-1.0 μA

35

320

25

160

MHz

2

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