2SA1981SEAO Ver la hoja de datos (PDF) - Kodenshi Auk Co., LTD
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2SA1981SEAO Datasheet PDF : 4 Pages
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2SA1981S
PNP Silicon Transistor
Description
• Audio power amplifier application
PIN Connection
Features
• High hFE : hFE=100~320
• Complementary pair with 2SC5344S
Ordering Information
Type No.
Marking
Package Code
2SA1981S
EA □ □
①② ③
SOT-23
① Device Code ② hFE Rank ③ Year&Week Code
B
E
C
SOT-23
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
VCBO
Collector-Emitter voltage
Emitter-Base voltage
VCEO
VEBO
Collector current
IC
Collector dissipation
PC*
Junction temperature
Tj
Storage temperature
Tstg
* Package mounted on 99.5% alumina 10×8×0.6mm
Ratings
-35
-30
-5
-800
350
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BVCBO IC=-500μA, IE=0
Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0
Emitter-Base breakdown voltage
BVEBO IE=-50μA, IC=0
Collector cut-off current
ICBO
VCB=-35V, IE=0
Emitter cut-off current
DC current gain
IEBO
hFE*
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
Collector-Emitter saturation voltage VCE(sat) IC=-500mA, IB=-20mA
Transition frequency
fT
VCE=-5V, IE=10mA
Collector output capacitance
Cob VCB=-10V, IE=0, f=1MHz
* : hFE rank / O : 100~200, Y : 160~320
KSD-T5C021-000
(Ta=25°C)
Min. Typ. Max. Unit
-35
-
-
V
-30
-
-
V
-5
-
-
V
-
-
-0.1 μA
-
-
-0.1 μA
100
-
320
-
-
-
-0.5
V
-
120
-
MHz
-
19
-
pF
1
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