2SA1908P Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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2SA1908P

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A

ICBO

Collector cut-off current

VCB=-120V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-3A ; VCE=-4V

fT

Transition frequency

IC=-0.5A ; VCE=-12V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-4A;RL=10Ω

IB1=-IB2=-0.4A

VCC=-40V

‹ hFE classifications

O

P

Y

50-100 70-140 90-180

Product Specification

2SA1908

MIN TYP. MAX UNIT

-120

V

-0.5

V

-10 μA

-10 μA

50

180

20

MHz

300

pF

0.14

μs

1.40

μs

0.21

μs

2

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